1 small signal transistor arrays UNA0217 (un217) transistor array to drive the small motor features small and lightweight low power consumption (low v ce(sat) transistor used) low-voltage drive with 4 elements incorporated (soC10c) applications video cameras cameras portable cd players small motor drive circuits in general for electronic equipment. absolute maximum ratings (ta=25 2?c) unit: mm internal connection parameter symbol ratings unit collector to base voltage v cbo 12v collector to emitter voltage v ceo 10v emitter to base voltage v ebo 7v collector current i c 1a total power dissipation p t * 0.5 w junction temperature t j 150 ?c storage temperature t stg C55 to +150 ?c note: marks used above: +: npn part, C: pnp part * t c = 25?c only when the elements are active so10-g1 package 12? 45? 0.2 +0.1 C0.0 (0.5) 0.5 0.2 1 2 3 4 5 10 9 8 7 6 0.4 0.1 1.5 0.1 1.5 +0.2 C0.1 (0.8) 12? 0.9 0.1 5.5 0.3 7.7 0.3 6.5 0.3 1 2 3 4 5 10 9 8 7 6 note.) the part number in the parenthesis shows conventional part number.
2 small signal transistor arrays electrical characteristics (ta=25 2?c) parameter symbol conditions min typ max unit collector cutoff current i cbo (npn) v cb = 10v 1 a (pnp) v cb = C10v C1 collector to base voltage v cbo (npn) i c = 10 a12 v (pnp) i c = C10 aC12 collector to emitter voltage v ceo (npn) i c = 1ma 10 v (pnp) i c = C1ma C10 emitter to base voltage v ebo (npn) i e = 10 a7 v (pnp) i e = C10 aC7 forward current transfer ratio h fe (npn) v ce = 1v, i c = 0.5a* 200 800 (pnp) v ce = C1v, i c = C 0.5a* 200 800 collector to emitter saturation voltage v ce(sat)1 (npn) i c = 1a, i b = 30ma 0.3 v (pnp) i c = C1a, i b = C30ma C 0.3 transition frequency f t (npn) v cb = 6v, i e = C50ma, f = 200mhz 150 mhz (pnp) v cb = C6v, i e = 50ma, f = 200mhz 150 collector output capacitance c ob (npn) v cb = 10v, i e = 0, f = 1mhz 50 pf (pnp) v cb = C10v, i e = 0, f = 1mhz 65 forward voltage (dc) v f (npn) i f = 1a 1.5 v (pnp) i f = C1a C1.5 *pulse measurement characteristics charts of pnp transistor block p t ta i c v ce i c v be UNA0217 0 0 160 20 60 100 140 40 120 80 0.6 0.5 0.4 0.3 0.2 0.1 ambient temperature ta ( ?c ) total power dissipation p t ( w ) 0 0 C12 C2 C10 C4 C8 C6 C4.8 C4.0 C3.2 C2.4 C1.6 C0.8 collector current i c ( a ) collector to emitter voltage v ce ( v ) ta=25?c C2ma C4ma C6ma C8ma C12ma C10ma i b = C14ma 0 C6 C5 C4 C3 C2 C1 base to emitter voltage v be ( v ) collector current i c ( a ) 0 C2.4 C0.4 C2.0 C0.8 C1.6 C1.2 v ce = C1v ta=75?c C25?c 25?c
3 small signal transistor arrays UNA0217 v ce(sat) i c h fe i c c ob v cb characteristics charts of npn transistor block p t ta i c v ce i c v be v ce(sat) i c h fe i c c ob v cb C0.001 C0.003 C0.01 C0.03 C0.01 C0.03 C0.1 C0.3 C1 C3 C10 C0.1 C0.3 C1 C3 C10 collector current i c ( a ) collector to emitter saturation voltage v ce(sat) ( v ) i c /i b =100/3 ta=75?c 25?c C25?c 0 C0.01 C0.03 600 500 400 300 200 100 C0.1 C0.3 C1 C3 C10 forward current transfer ratio h fe collector current i c ( a ) v ce =C1v ta=75?c 25?c C25?c 0 C0.1 C0.3 240 200 160 120 80 40 C1 C3 C10 C30 C100 collector output capacitance c ob ( pf ) collector to base voltage v cb ( v ) f=1mhz i e =0 ta=25?c 0 0 160 20 60 100 140 40 120 80 0.6 0.5 0.4 0.3 0.2 0.1 ambient temperature ta ( ?c ) total power dissipation p t ( w ) 0 012 210 48 6 4.8 4.0 3.2 2.4 1.6 0.8 collector current i c ( a ) collector to emitter voltage v ce ( v ) ta=25?c 2ma 4ma 6ma 8ma 10ma 12ma i b =14ma 0 6 5 4 3 2 1 base to emitter voltage v be ( v ) collector current i c ( a ) 02.4 0.4 2.0 0.8 1.6 1.2 v ce =1v ta=75?c C 25?c 25?c 0.001 0.003 0.01 0.03 0.01 0.03 0.1 0.3 1 3 10 0.1 0.3 1 3 10 collector current i c ( a ) collector to emitter saturation voltage v ce(sat) ( v ) i c /i b =100/3 ta=75?c 25?c C25?c 0 0.01 0.03 600 500 400 300 200 100 0.1 0.3 1 3 10 forward current transfer ratio h fe collector current i c ( a ) v ce =1v ta=75?c 25?c C25?c 0 0.1 0.3 120 100 80 60 40 20 1 3 10 30 100 collector output capacitance c ob ( pf ) collector to base voltage v cb ( v ) f=1mhz i e =0 ta=25?c
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